MD3250 查看數據表（PDF） - New Jersey Semiconductor

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比赛名单

MD3250

Dual PNP silicon annular transistors

New Jersey Semiconductor 

'l.Eis.s.u £e.mi-C.onau(£oi Lpioaucti, Una.

£/

tJ

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.SA

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Mo3250,A,F, AF

MD3251,A,F,AF

VCEO = 40V

|c = 50 mA

CASE 32

CASE 33

(TO-89)

Dual PNP silicon annular transistors, especially

designed for low-level, differential amplifier applica-

tions,

PNP

PNP

PNP

PNP

PIN CONNECTIONS

(BOTTOM VIEW)

MD3250F, AF

MD3251F, AF

MAXIMUM RATINGS (each side) (T* = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector- Emitter Voltage

Emitter -Base Voltage

DC Collector Current

Junction Temperature

Storage Temperature Range

Total Device Dissipation @ TA = 25°C

TO-5 Case

Derate above 25 °C

Flat Pack

Derate above 25 °C

Total Device Dissipation @ T_ = 25°C

TO-5 Case

Derate above 25 °C

Symbol

Value

VCB

VCEO

VEB

JC

TJ

Tstg

50

40

5

50

+200

-65 to +200

One Side Both Sides

PD

500

2.9

250

1.5

PD

1.2

6.85

600

3.4

350

2.0

2.0

11.42

Unit

Vdc

Vdc

Vdc

mAdc

°C

°C

mW

mW/°C

mW

mW/°C

mW

mW/°C

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by N.ISemi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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