MJ10006 查看數據表（PDF） - New Jersey Semiconductor
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MJ10006 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage
( lc = 250 mA,lB = 0, Vclamp=Rate VCEO )
MJ10006
VCEO(SUS)
350
MJ10007
400
Collector Cutoff Current
'cER
( VCE= Rated VCEV,RBE=50 ohm,Tc=100°C)
Collector Cutoff Current
( VCEV= Rated Value,VBE(OFF)=1.5 V )
'CEV
( VCEV= Rated Value,VBE(OFF)=1.5 V, TC=100°C)
Emitter Cutoff Current
'EBO
(VEB=2.0V,IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5A,VCE = 5.0V)
(IC = 5.0A,VCE = 5.0V)
Collector - Emitter Saturation Voltage
{IC = 5.0A, IB = 250mA)
{IC = 10A, 1B=1.0A)
( lc = S.O A, IB = 250 mA,Tc=lOO°C )
Base - Emitter Saturation Voltage
<lc=5.0A, IB= 250mA)
( lc = 5.0 A, 1B =250 mA, TC=100°C )
Diode Forward Voltage
( IF = 5.0 A )
hFE
40
30
VCE<sat>
^BE(tat)
VF
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain(2}
( \ = 1.0 A, VCE = 10 V, f » 1.0 MHz)
Output Capacitance
(VCB=10V, !E=0,f=100kHz)
n.
10
cob
60
SWITCHING CHARACTERISTICS
Delay Time
Vcc = 250 V, lc = 5.0 A
td
Rise Time
IB1 = 250 mA, VBE((rfn=5.0V
tr
Storage Time
tp = 50us, Duty Cycle ^ 2%
t.
Fall Time
tr
(1) Pulse Test: Pulse width = 300 us , Duty Cycle ^ 2.0%
<2)fT= K! - f w
MJ10006, MJ10007, NPN
Max
Unit
V
mA
5.0
0.25
mA
5.0
mA
175
500
300
V
1.9
2.9
2.0
V
2.5
2.5
V
5.0
PF
0.2
us
0.6
us
' 1.5
us
0.5
us
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