MJD45H11 查看數據表（PDF） - Inchange Semiconductor

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MJD45H11

Silicon PNP Power Transistors

Inchange Semiconductor 

isc Silicon PNP Power Transistors

INCHANGE Semiconductor

MJD45H11

DESCRIPTION

·Low Collector-Emitter Saturation Voltage

: VCE(sat)= 1.0V(Max)@ IC = 8A

·Fast Switching Speeds

·Complement to Type MJD44H11

·DPAK for Surface Mount Applications

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for general pourpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@TC=25℃

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

-16

A

20

W

1.75

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

6.25 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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