NTD18N06L(2011) 查看數據表（PDF） - ON Semiconductor
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NTD18N06L Datasheet PDF : 8 Pages
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NTD18N06L, NTDV18N06L
40
VGS = 10 V
8V
30
6V
5.5 V
5V
4.5 V
20
4V
3.5 V
10
3V
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
VDS ≥ 10 V
30
20
10
TJ = 25°C
TJ = 100°C
TJ = −55°C
0
1.6
2.4
3.2
4
4.8
5.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.12
0.1
VGS = 5 V
0.08
0.06
0.04
0.02
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.12
0.1
VGS = 10 V
0.08
0.06
0.04
0.02
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0
0
10
20
30
40
0
10
20
30
40
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 9 A
1.8
VGS = 5 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
TJ = 100°C
10
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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