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NTD3055L104-1G(2016) 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
比赛名单
NTD3055L104-1G
(Rev.:2016)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NTD3055L104-1G Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NTD3055L104, NTDV3055L104
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60
70
62.9
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IDSS
IGSS
mAdc
1.0
10
±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0
1.6
2.0
4.2
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 6.0 Adc)
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 5.0 Vdc, ID = 12 Adc)
(VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)
RDS(on)
VDS(on)
gFS
mW
89
104
Vdc
0.98 1.50
0.86
9.1
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
316
440
pF
105
150
35
70
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
9.2
20
ns
104
210
19
40
40.5
80
7.4
20
nC
2.0
4.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 12 Adc, VGS = 0 Vdc) (Note 3)
VSD
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
0.95
1.2
Vdc
0.82
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
ta
tb
QRR
35
ns
21
14
0.04
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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