2SB613 查看數據表（PDF） - New Jersey Semiconductor
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2SB613 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; IB= 0
V(BR)CBO Collector-Emitter Breakdown Voltage lc=.1mA;lE=0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-1mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage IC=-10A;IB=-1A
ICBO
Collector Cutoff Current
VCB= -250V; IE= 0
IEBO
Emitter Cutoff Current
riFE
DC Current Gain
VEB= -5V; 'lc= 0
lc=-1A;VCE=-2V
2SB613
MIN MAX UNIT
-250
V
-250
-5
V
-3.0
V
-0.1 mA
-0.1 mA
35
200
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