2SD2444K 查看數據表（PDF） - ROHM Semiconductor
零件编号
产品描述 (功能)
比赛名单
2SD2444K Datasheet PDF : 8 Pages
| |||
2SD2444K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
15
V
VCEO
15
V
VEBO
6
V
IC
1
A
ICP*1
2
A
PD*2
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 50μA
15 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
15 -
-
V
Emitter-base breakdown voltage BVEBO IE = 50μA
6
-
-
V
Collector cut-off current
ICBO VCB = 12V
-
- 500 nA
Emitter cut-off current
IEBO VEB = 5V
-
- 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 400mA, IB = 20mA
-
- 300 mV
DC current gain
hFE1 VCE = 2V, IC = 50mA
180 - 390
-
hFE2 VCE = 2V, IC = 800mA 80
-
-
Transition frequency
fT
VCE = 2V, IE = -50mA,
f = 100MHz
- 200 - MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
15
-
pF
hFE values are calssified as follows :
rank
R
-
-
-
-
hFE1
180-390
-
-
-
-
*1 Pw=10ms Single Pulse
*2 Each terminal mounted on a reference land.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/6
20150403 - Rev.001
Share Link: 