UT51C164JC-25 查看數據表（PDF） - Utron Technology Inc

零件编号

产品描述 (功能)

比赛名单

UT51C164JC-25

256K X 16 BIT EDO DRAM

Utron Technology Inc 



UTRON

Rev 1.5

UT51C164

256K X 16 BIT EDO DRAM

DC CHARACTERISTICS (TA = 0℃ to 70ºC, VDD = 5.0 V ± 0.5 V, Vss = 0 V)

SYMBOL PARAMETER

IDD1

Operating Current,

VDD Supply

IDD2

Standby Current

(TTL Input)

IDD3 RAS Only Refresh

Current

IDD4

EDO Page

Current

Mode

IDD5 CBR Refresh Current

SPEED

(tRAC)

-25

-35

-40

-50

-

-25

-35

-40

-50

-25

-35

-40

-50

-25

-35

-40

-50

IDD6

Standby Current

(CMOS Input)

-

VDD Power Supply

-

ILI Input Leakage Current

-

ILO

Output

Current

Leakage

-

VIL Input Low Voltage

-

VIH Input High Voltage

-

VOL Output Low Voltage

-

VOH Output High Voltage

-

UT51C164

Min

Max

-

200

-

190

-

180

-

170

-

3

-

200

-

190

-

180

-

170

-

220

-

220

-

200

-

190

-

200

-

190

-

180

-

170

-

2

4.5

5.5

-10

10

-10

10

-1

0.8

2.4

VDD +1

-

0.4

2.4

-

UNIT TEST CONDITION

mA tRC = tRC (min.)

mA RAS = UCAS = LCAS

=VIH

mA tRC = tRC (min.)

mA tPC = tPC (min.)

mA tRC = tRC (min.)

RAS ≧ VDD-0.2V

mA CAS ≧ VDD-0.2V

All other inputs≧ VSS

V

uA VSS≦ VIN ≦VDD

uA

VSS≦ VOUT ≦VDD

RAS = CAS = VIH

V

V

V IOI = 2mA

V IOH = 2mA

Notes: IDD1, IDD3, IDD4, IDD5 are dependent on output loading and cycle rates. Specified values are obtained with the output

open. IDD is specified as an average current. In IDD1, IDD3, and IDD5 address can be changed maximum once while

RAS =VIL. In IDD4, address can be changed maximum once within one EDO page cycle time, tPC.

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

6

P90005

Share Link: