MC-4R64FKE8S-840 查看數據表（PDF） - Elpida Memory, Inc

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MC-4R64FKE8S-840

Direct Rambus DRAM SO-RIMM™ Module

Elpida Memory, Inc 

MC-4R64FKE8S-840

SO-RIMM Module Current Profile

IDD

RIMM module power conditions Note1

MAX.

Unit

IDD1

One RDRAM in Read Note2, balance in NAP mode

-840

709.2

mA

IDD2

One RDRAM in Read Note2, balance in Standby mode

-840

795

mA

IDD3

One RDRAM in Read Note2, balance in Active mode

-840

840

mA

IDD4

One RDRAM in Write, balance in NAP mode

-840

769.2

mA

IDD5

One RDRAM in Write, balance in Standby mode

-840

855

mA

IDD6

One RDRAM in Write, balance in Active mode

-840

900

mA

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290

mA for x18 ECC module for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Data Sheet E0259N20 (Ver. 2.0)

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