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ICS670-04 查看數據表(PDF) - Integrated Device Technology

零件编号
产品描述 (功能)
比赛名单
ICS670-04
IDT
Integrated Device Technology IDT
ICS670-04 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ICS670-04
LOW PHASE NOISE ZERO DELAY BUFFER AND MULTIPLIER
ZDB AND MULTIPLIER
Parameter
Short Circuit Current
Internal Pull-up Resistor
Input Capacitance
Symbol
Conditions
IOS Each output
RPU OE, select pins
CIN OE, select pins
Min.
Typ.
±50
200
5
Max.
Units
mA
k
pF
AC Electrical Characteristics
VDD = 3.3V ±10%, Ambient Temperature -40 to +85° C, unless stated otherwise
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Input Clock Frequency
Output Clock Frequency
fIN
See table on page 2
5
210 MHz
210 MHz
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Input to Output Skew
tOR 0.8 to 2.0 V, no load
tOF 2.0 to 0.8 V, no load
tDC measured at VDD/2
Note 1
1.5 ns
1.5 ns
45
50 55
%
±100
ps
Maximum Absolute Jitter
short term
±45
ps
Maximum Jitter
one sigma
15
ps
Phase Noise, relative to
carrier, 125 MHz (x5)
100 Hz offset
1 kHz offset
-103
-117
dBc/Hz
dBc/Hz
10 kHz
-111
dBc/Hz
200 kHz
-88
dBc/Hz
Note 1: Rising edge of ICLK compared with rising edge of CLK2, with FBCLK connected to FBIN, and 15 pF load
on CLK2.
Note for OE1
The OE1 pin is intended to facilitate board test. Note that disabling the FBLK will open the loop, causing a
high-frequency to be output from CLK2. Therefore, set OE1 low only if the chip is in power-down (S3:S0 = 0).
Thermal Characteristics
Parameter
Symbol Conditions
Thermal Resistance Junction to
Ambient
θJA Still air
θJA 1 m/s air flow
θJA 3 m/s air flow
Thermal Resistance Junction to Case θJC
Min.
Typ.
120
115
105
58
Max.
Units
° C/W
° C/W
° C/W
° C/W
IDT™ / ICS™ LOW PHASE NOISE ZERO DELAY BUFFER AND MULTIPLIER 4
ICS670-04 REV E 051310

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