2CL70A 查看數據表（PDF） - getedz electronics

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产品描述 (功能)

比赛名单

2CL70A

5.0mA 6.0kV 100nS--High Voltage Silicon Rectifier Diode

getedz electronics 

2CL70A

5.0mA 6.0kV 100nS--High Voltage Silicon Rectifier Diode

INTRODUCE:

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and

high reliability epoxy resin sealing structure,

and through professional testing equipment

inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.18 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

HVGT NAME: DO-206

Data Value Units

Repetitive Peak Renerse Voltage

Average Forward Current Maximum

Suege Current

VRRM

IFAVM

IFSM

TA=25°C

TA=25°C

TOIL=--°C

TA=25°C; Half-Sine Wave; 8.3mS

Junction Temperature

TJ

Allowable Operation Case Temperature

Tc

Storage Temperature

TSTG

ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

6.0

kV

5.0

mA

--

mA

0.5

A

-40~+125

°C

125

°C

-40~+125

°C

Data value Units

Maximum Forward Voltage Drop

Maximum Reverse Current

Maximum Reverse Recovery Time

Junction Capacitance

VF

at 25°C; at IF(AV)

20

V

IR1

at 25°C; at VRRM

2.0

uA

IR2

at 100°C; at VRRM

5.0

uA

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

100

nS

CJ

at 25°C; VR=0V; f=1MHz

1.0

pF

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-08 1 / 2

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