2N3700 查看數據表（PDF） - TT Electronics.

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2N3700

SILICON NPN TRANSISTOR

TT Electronics. 

SILICON NPN TRANSISTOR

2N3700

• High Voltage, Medium Power Silicon Planar NPN Transistor

• Hermetic TO18 Metal Package

• High Reliability Screening Options Available

• CECC and Space Quality Level Options

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

VCBO Collector – Base Voltage

140V

VCEO Collector – Emitter Voltage

80V

VEBO Emitter – Base Voltage

7.0V

IC

Continuous Collector Current

1.0A

PD

Total Power Dissipation at TA = 25°C

0.5W

Derate Above TA = 25°C

2.9mW/°C

TC = 25°C

1.0W

Derate Above TC = 25°C

5.7mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols Parameters

RθJA

Thermal Resistance, Junction To Ambient

RθJC

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

350

175

Unit

°C/W

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 5266

Issue 2

Page 1 of 3

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