JANTXV2N6788 查看數據表（PDF） - International Rectifier
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JANTXV2N6788
International Rectifier
JANTXV2N6788 Datasheet PDF : 7 Pages
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTORS
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS
IRFF120
100V
RDS(on) ID
0.30 6.0A
PD-90426E
IRFF120
JANTX2N6788
JANTXV2N6788
100V, N-CHANNEL
REF: MIL-PRF-19500/555
Description
The HEXFET® technology is the key to International
Rectifier’s HiRel advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on state
resistance combined with high trans conductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching and temperature stability of the
electrical parameters.
TO-39
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Parameter
Value
ID1 @ VGS = 10V, TC = 25°C
ID2 @ VGS = 10V, TC = 100°C
IDM @ TC = 25°C
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
6.0
3.5
24
20
0.16
± 20
0.242
2.2
2.0
5.5
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
Weight
0.98 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-04
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