2N3637 查看數據表（PDF） - TT Electronics.

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2N3637

SILICON PNP TRANSISTOR

TT Electronics. 

SILICON PNP TRANSISTOR

2N3637

• General Purpose PNP Silicon Transistor

• High Voltage, High Speed Saturated Switching

• Low Power Amplifier Applications

• Hermetic TO39 Package

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

VCBO Collector – Base Voltage

-175V

VCEO Collector – Emitter Voltage

-175V

VEBO Emitter – Base Voltage

-5.0V

IC

Continuous Collector Current

-1.0A

PD

Total Power Dissipation at

TA = 25°C

1.0W

Derate Above 25°C

5.71mW/°C

TC = 25°C

5.0W

Derate Above 25°C

28.6mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols Parameters

RθJA

Thermal Resistance, Junction To Ambient

RθJC

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

175

35

Unit

°C/W

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 3068

Website: http://www.semelab-tt.com

Issue 3

Page 1 of 3

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