BCX41 查看數據表（PDF） - Continental Device India Limited
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BCX41 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
BCX41
SOT-23
Formed SMD Package
1
2
MARKING
BCX41=EK
Medium Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCES
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation
Ptot
Operating and Storage Temperature
Range
Tj,Tstg
VALUE
125
125
5.0
1.0
800
100
330
- 55 to +150
UNITS
V
V
V
A
mA
mA
mW
ºC
Electrical Characterstics (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
Collector Base Cut Off Current
ICES
VCE=100V, VBE=0
VCE=100V, VBE=0, Tamb=150ºC
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
ICEX
IEBO
*VCE (sat)
VCE=100V, VBE=0.2V, Tamb=85ºC
VCE=100V, VBE=0.2V, Tamb=125ºC
VEB=4V, IC=0
IC=300mA, IB=30mA
Base Emitter Saturation Voltage
DC Current Gain
*VBE (sat)
hFE
IC=300mA, IB=30mA
IC=100µA, VCE=1V
*IC=100mA, VCE=1V
Transition Frequency
Output Capacitance
*Pulse width=300µs, duty cycle=2%
fT
CobO
*IC=200mA, VCE=1V
IC=10mA, VCE=5V, f=20 MHz
VCB=10V, IE=0, f=1MHz
MIN TYP
25
63
40
100
12
MAX
100
10
10
75
100
0.9
1.4
BCX41 Rev 240310E
UNIT
nA
µA
µA
µA
nA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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