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SF161CTG 查看數據表(PDF) - Thinki Semiconductor Co., Ltd.

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比赛名单
SF161CTG Datasheet PDF : 2 Pages
1 2
SF161CTG thru SF168CTG
Pb Free Plating Product
SF161CTG thru SF168CTG
Pb
16.0 Ampere Heatsink Dual Common Cathode Super Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB/TO-220-3L
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTG" Suffix "CTA"
Suffix "CTD"
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage VRRM
SF161CTG
SF164CTG
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=125(Total Device 2x8A=16A)
IF(AV)
SF165CTG
SF166CTG
400
280
400
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 8.0 A (Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25
At Rated DC Blocking Voltage @TJ=125
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
5.0
50
35
90
1.5
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
SF167CTG UNIT
SF168CTG
600
V
420
V
600
V
A
A
1.7
V
μA
μA
nS
pF
/W
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/

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