AS6C3216A-55TINTR 查看數據表（PDF） - Alliance Semiconductor

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AS6C3216A-55TINTR

Low Power CMOS Static Random Access Memory

Alliance Semiconductor 

AS6C3216A-55TIN

DATA RETENTION CHARACTERISTICS

PARAMETER SYMBOL

TEST CONDITION

VCC for Data Retention

VDR CE#≧VCC - 0.2V or CE2≦0.2V

Data Retention Current

VCC = 1.2V

IDR CE# ≧VCC-0.2V or CE2≦0.2V

other pins at 0.2V or VCC-0.2V

Chip Disable to Data

Retention Time

Recovery Time

tRC* = Read Cycle Time

tCDR

See Data Retention

Waveforms (below)

tR

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE# controlled)

MIN.

1.2

-

TYP.

-

6.5

MAX. UNIT

3.6 V

16 µA

-

-

50 µA

0

-

tRC*

-

-

ns

-

ns

Vcc

CE#

Vcc(min.)

tCDR

VIH

VDR ¡Ù 1.2V

CE# ¡Ù Vcc-0.2V

Vcc(min.)

tR

VIH

Low Vcc Data Retention Waveform (2) (CE2 controlled)

Vcc

CE2

Vcc(min.)

tCDR

VIL

VDR ¡Ù 1.2V

CE2 ¡Ø 0.2V

Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)

Vcc

LB#,UB#

Vcc(min.)

tCDR

VIH

VDR ¡Ù 1.2V

LB#,UB# ¡Ù Vcc-0.2V

Vcc(min.)

tR

VIL

Vcc(min.)

tR

VIH

Confidential

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Rev.1.0. Mar. 2017

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