AS7C164A 查看數據表（PDF） - Alliance Semiconductor

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AS7C164A

8K X 8 BIT HIGH SPEED CMOS SRAM

Alliance Semiconductor 

NOVEMBER 2009

8K X 8 BIT HIGH SPEED CMOS SRAM

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER

SYM.

Read Cycle Time

tRC

Address Access Time

tAA

Chip Enable Access Time

tACE

Output Enable Access Time

tOE

Chip Enable to Output in Low-Z

tCLZ

Output Enable to Output in Low-Z tOLZ

Chip Disable to Output in High-Z

tCHZ

Output Disable to Output in High-Z tOHZ

Output Hold from Address Change tOH

(2) WRITE CYCLE

PARAMETER

SYM.

Write Cycle Time

tWC

Address Valid to End of Write

tAW

Chip Enable to End of Write

tCW

Address Set-up Time

tAS

Write Pulse Width

tWP

Write Recovery Time

tWR

Data to Write Time Overlap

tDW

Data Hold from End of Write Time tDH

Output Active from End of Write

tOW

Write to Output in High-Z

tWHZ

*These parameters are guaranteed by device

AS7C164A

NOVEMBER/2009 V1.2

Alliance Memory Inc

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