C106(2002) 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

比赛名单

C106
(Rev.:2002)

Sensitive Gate Silicon Controlled Rectifiers

ON Semiconductor 

C106 Series

THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

3.0

°C/W

Thermal Resistance, Junction to Ambient

RθJA

75

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

TL

260

°C/W

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

IDRM, IRRM

(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)

TJ = 25°C

–

TJ = 110°C

–

ON CHARACTERISTICS

–

10

µA

–

100

µA

Peak Forward On–State Voltage (Note 3)

(ITM = 4 A)

Gate Trigger Current (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms)

Peak Reverse Gate Voltage (IGR = 10 µA)

Gate Trigger Voltage (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms)

Gate Non–Trigger Voltage (Continuous dc) (Note 4)

(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)

Latching Current

(VAK = 12 V, IG = 20 mA)

Holding Current (VD = 12 Vdc)

(Initiating Current = 20 mA, Gate Open)

DYNAMIC CHARACTERISTICS

TJ = 25°C

TJ = –40°C

TJ = 25°C

TJ = –40°C

TJ = 25°C

TJ = –40°C

TJ = 25°C

TJ = –40°C

TJ = +110°C

VTM

IGT

VGRM

VGT

VGD

IL

IH

–

–

2.2

Volts

µA

–

15

200

–

35

500

–

–

6.0

Volts

Volts

0.4

0.60

0.8

0.5

0.75

1.0

0.2

–

–

Volts

mA

–

0.20

5.0

–

0.35

7.0

mA

–

0.19

3.0

–

0.33

6.0

–

0.07

2.0

Critical Rate–of–Rise of Off–State Voltage

(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

4. RGK is not included in measurement.

dv/dt

–

8.0

–

V/µs

http://onsemi.com

2

Share Link: