C106 查看數據表（PDF） - ON Semiconductor
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C106 Datasheet PDF : 6 Pages
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C106 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM, IRRM
Peak Forward On−State Voltage (Note 3)
VTM
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Peak Reverse Gate Voltage (IGR = 10 mA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
TJ = 25°C
TJ = −40°C
TJ = 25°C
TJ = −40°C
IGT
VGRM
VGT
VGD
Latching Current
(VAK = 12 V, IG = 20 mA)
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
DYNAMIC CHARACTERISTICS
IL
TJ = 25°C
TJ = −40°C
IH
TJ = 25°C
TJ = −40°C
TJ = +110°C
Critical Rate−of−Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
4. RGK is not included in measurement.
dv/dt
Min
Typ
Max
Unit
−
−
10
mA
−
−
100
mA
−
−
2.2
V
mA
−
15
200
−
35
500
−
−
6.0
V
V
0.4
0.60
0.8
0.5
0.75
1.0
0.2
−
−
V
mA
−
0.20
5.0
−
0.35
7.0
mA
−
0.19
3.0
−
0.33
6.0
−
0.07
2.0
−
8.0
−
V/ms
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
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