MMBD4448V 查看數據表（PDF） - Willas Electronic Corp.

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产品描述 (功能)

比赛名单

MMBD4448V

SOT-563 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

FM120-M+

MMBD4448VTHRU

SOT-563 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M+

SOD-123+ PACKAGE

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

SWITCHbIeNttGer rDevIOerDseEleakage current and thermal resistance.

• Low profile surface mounted application in order to

FEATURoEptSimize board space.

z Fa•stLoswwpitocwheinr glosssp, eheigdh efficiency.

• High current capability, low forward voltage drop.

z Hig• hHicgohnsdurugcetacanpcaebility.

z Pb•-FGreuaerpdraincgkafogreoviseravvoaltialagbe lperotection.

Ro•HUSltprarohdiguhc-tsfpoer epdacswkiintcghcinogd.e suffix ”G”

Ha•loSgielincofnreeeppitaroxdiaulcptlafonrapr achcikpin, mg ectoadl esilsicuoffnixju“nHc”tion.

• Lead-free parts meet environmental standards of

z MoisMtuILr-eSSTDen-1s9i5ti0v0it/y22L8evel 1

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data

MARKI•NEGpo: xKy A: ULL94-V0 rated flame retardant

Package outline

SOT-563

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

654

1

2

30.040(1.0)

0.024(0.6)

Maxim•uCmasRea: tMinolgdsed@plTasat=ic2, S5O℃D-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

Parameter

Method 2026

Symbol

Limit

Unit

Non-Re•pPeotliatirvitey P: IenadkicRateevdebrysecaVthooltdaegbeand VRM

100Dimensions in inches and (millimeters) V

• Mounting Position : Any

RMS Reverse Voltage

VR(RMS)

57

V

• Weight : Approximated 0.011 gram

Peak Repetitive Peak Reverse Voltage

VRRM

Working PeakMRAevXeIrMseUVMolRtaAgTeINGS AND EVLREWCMTRICAL CHARACTERISTIC80S

V

DRCatiBngloscakt i2n5g℃Vaomltbaigenet temperature unless otherwisVeRspecified.

Single phase half wave, 60Hz, resistive of inductive load.

FFoorrwcaapradcCitivoenltoiandu,oduesratCeucrurrerenntt by 20%

IFM

500

mA

Average Rectified ORuATtpINuGt SCurrent

SYIMOBOL FM120-MH FM130-MH FM140-MH FM215500-MH FM160-MH FM180-MH FM1100-MHmFMA1150-MH FM1200-MH UN

PMearakkingFCoorwdeard Surge Current @t=1.0μs

Maximum Recurrent Peak Reverse V@oltta=g1e.0s

12

VIFRSRMM

20

Maximum RMS Voltage

Power Dissipation

Maximum DC Blocking Voltage

VRMS

14

Pd

VDC

20

TMhaxeimrmumalARveersaigsetaFnorcwearJduRneccttiifoiend tCourrent

Ambient

RθIOJA

Peak Forward Surge Current 8.3 ms single half sine-wave

SsutpoerriamgpeosTedeomnpraeterdatlouarde(JEDEC method)

IFTSSMTG

13

14 41.05

16

18

30

40

15.05

60

80

21

28

35

42

56

150

30

40

50

60

80

833

1.0

T

-55 ~+150 30

10

115

100 A 150

70

105

mW

100

150

℃/W

℃

120

200 Vol

140 Vol

200 Vol

Am

Am

Typical Thermal Resistance (Note 2)

RΘJA

40

℃/W

ETleypcictarlicJuanlctRionaCtianpgacsita@nceT(aN=ot2e 51)℃

CJ

120

PF

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage TemperaPtuareraRmanegteer

SymTSbToGl Min Typ Max Unit - 65 to +175 Conditions

℃

Reverse breakdoCwHAnRvAoClTtaEgReISTICS

SVY(MBRB)OL FM18200-MH FM130-MH FM140-MH FM150-MVH FM160-MH FM180-MIHR=FM2.1510μ0A-MH FM1150-MH FM1200-MH UN

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

FRoatrewd aDrCdBvlooclktainggeVoltage

@T A=125℃

NOTES:

VFV1 F

VF2IR

VF3

0.62

0.50 0.72

0.855

1.0

V0.70

0.5

V

10

V

0IF.8=55mA

0.9

IF=10mA

IF=100mA

0.92 Vol

mAm

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDVCF.4

1.25

V

IF=150mA

2- Thermal Resistance From Junction to Ambient

IR1

Reverse current

IR2

0.1

μA

25

nA

VR=70V

VR=20V

Capacitance between terminals

CT

3.5

pF

VR=6V,f=1MHz

Reverse recovery time

trr

4

ns

VR=6V, IF=5mA

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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