IRFY440CM(1996) 查看數據表（PDF） - International Rectifier

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IRFY440CM
(Rev.:1996)

HEXFET® POWER MOSFET

International Rectifier 

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10

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IRFY440CM Device

1

D = 0.50

0 .2 0

0 .1 0

0.1

0.05

0.02

0.01

SING LE P ULSE

(THERMAL RESPONSE)

0.01

A

0.00001

0.0001

0.001

0.01

0.1

1

t 1 , R e cta n g u la r P u lse D u ra tio n (se c)

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

VD S

L

D R IVE R

RG

D .U .T

IAS

tp

0.01Ω

+

-

VD D

A

Fig. 12a — Unclamped Inductive Test Circuit

V (B R)DSS

tp

I AS

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12c — Max. Avalanche Energy vs. Current

To Order

Fig. 13a — Gate Charge Test Circuit

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