SML60S18 查看數據表（PDF） - Semelab - > TT Electronics plc

零件编号

产品描述 (功能)

比赛名单

SML60S18

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Semelab - > TT Electronics plc  

SML60T38

T247clip Package Outline.

Dimensions in mm (inches)

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

5.38 (0.212)

6.20 (0.244)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

2

0.40 (0.016)

0.79 (0.031)

123

1.01 (0.040)

1.40 (0.055)

2.87 (0.113)

3.12 (0.123)

1.65 (0.065)

2.13 (0.084)

VDSS

ID(cont)

RDS(on)

600V

38A

0.150W

2.21 (0.087)

2.59 (0.102)

Pin 1 – Gate

Pin 2 – Drain

D

5.45 (0.215)

BSC

2plcs

Pin 3 – Source

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• New T247clip Package

(Clip–mounted TO–247 Package)

G

S

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

Drain – Source Voltage

600

V

ID

Continuous Drain Current

IDM

Pulsed Drain Current 1

38

A

152

A

VGS

VGSM

Gate – Source Voltage

Gate – Source Voltage Transient

±30

V

±40

PD

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

520

W

4.16

W/°C

TJ , TSTG

TL

IAR

EAR

EAS

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

–55 to 150

°C

300

38

A

50

mJ

2500

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

W 2) Starting TJ = 25°C, L = 3.46mH, RG = 25 , Peak IL = 38A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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