KTC4072E 查看數據表（PDF） - KEC
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KTC4072E Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES
·High Current.
·Low VCE(sat).
: VCE(sat)≤250mV at IC=200mA/IB=10mA.
·Complementary to KTA2012E.
KTC4072E
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
RATING
15
12
6
500
1
100
150
-55～150
UNIT
V
V
V
mA
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
Collector Output Capacitance
Cob
TEST CONDITION
VCB=15V, IE=0
IC=10μA
IC=1mA
IE=10μA
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
VCB=10V, IE=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
2014. 3. 31
Revision No : 3
1/3
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