DMG3407SSN 查看數據表（PDF） - Diodes Incorporated.
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DMG3407SSN Datasheet PDF : 7 Pages
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DMG3407SSN
2.5
10
2.0
8
1.5
6
1.0
4
0.5
2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE ((o癈C))
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
Ciss
100
Coss
Crss
f = 1MHz
10
0
10
5
10
15
20
25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
8
6
4
2
0
0
4
8
12
16
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
NT(nA) 1,000
RE
R
U
100
C
GE
LEAKA
10
,S
-I DS
1
TA =150°C
TA =125°C
TA =85°C
TA = 25°C
0.1
2
6 10 14 18 22 26 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
RDS(ON) LIMITED
PW=100μs
10
1 PW=1ms
0.1
0.01
PW=10ms
TJ(MAX)=150℃
TC=25℃
PW=100ms
VGS= -10V
Single Pulse
PW=1s
DUT on 1*MRP
PW=10s
board
DC
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.12 SOA, Safe Operation Area
DMG3407SSN
Document number: DS35135 Rev. 7 - 2
4 of 7
www.diodes.com
February 2017
© Diodes Incorporated
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