ST3400SRG 查看數據表（PDF） - STANSON TECHNOLOGY
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ST3400SRG Datasheet PDF : 6 Pages
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ST3400SRG
N Channel Enhancement Mode MOSFET
5.8A
DESCRIPTION
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
FEATURE
30V/5.8A, RDS(ON) = 25mΩ (Typ.)
@VGS = 10V
30V/4.8A, RDS(ON) = 30mΩ
@VGS = 4.5V
30V/4.0A, RDS(ON) = 40mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
A0YA
1
2
Y: Year Code A: Week Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400SRG 2009. V1
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