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82C836 查看數據表(PDF) - Unspecified

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82C836
ETC
Unspecified ETC
82C836 Datasheet PDF : 205 Pages
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Pin Assignments
Signal Descriptions s
Table 2-3. Numeric Coprocessor Interface Signals
Pin
Type
133
Output
127
Input
128
Input
Name
-BUSY
-NPBUSY
-NPERR
Description
Numeric coprocessor busy status output to the
80386sx. This signal normally echoes the state of
-NPBUSY from the 80387sx. During coprocessor
error conditions, it is held low. Also, it is pulsed
repetitively by the 82C836 when no coprocessor is
present.
Busy status from 80387sx. This signal indicates the
80387sx is currently executing a command.
Error signal from the coprocessor.
Table 2-4. Memory Interface Signals
Pin
108-117
107-104
Type
Output
Output
Name
MA0-MA9
-RAS<0:3>,
(MA10)
101
Output
-CASH
100
Output
-CASL
119
Bidirectional
PARH
118
Bidirectional
PARL
103
Output
-MWE
38
Output
-ROMCS
Description
Multiplexed DRAM address bits MA 0 to 9 are
outputs to the DRAMs
Row Address Strobes 0 to 3 are active-low strobes
used as RAS controls for the banks of DRAM. Each
bank is 18 bits wide (including 2 bits for parity).
Each byte is addressed with an even or odd CAS
signal. -RAS<0:3>, perform different functions in
an encoded RAS mode. When using a 4MB DRAM
configuration, -RAS3 becomes MA10. For further
details, refer to Section 5, System Interface, subsection
titled DRAM Interface.
Column Address Strobe High is an active-low output
to all high (odd) byte DRAMs.
Column Address Strobe Low is an active-low output
to all low (even) byte DRAMs.
Parity High is the parity bit from the high-order bytes
of the DRAMs.
Parity Low is the parity bit from the low-order bytes
of the DRAMs.
Memory Write Enable is an active-low output
connected to all DRAMs. -MWE is normally low, but
is high for read cycle. This signal can also be used
directly to control the direction of the transceivers (if
present) that buffer the DRAM data to or from the
CPU local data bus.
ROM Chip Select is an active-low output to the
EPROM(s). -ROMCS becomes active for the
progammed address range.
Chips and Technologies, Inc.
PRELIMINARY
Revision 3.0 2-5

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