BF775 查看數據表（PDF） - New Jersey Semiconductor
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BF775 Datasheet PDF : 2 Pages
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Silicon NPN RF Transistor
BF775
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc=1mA; IB=0
15
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
10
uA
ICBO
Collector Cutoff Current
VCB=10V;IE=0
0.1
uA
IEBO
Emitter Cutoff Current
VEB= 2.5V; lc= 0
0.1 n A
hpe
DC Current Gain
lc=15mA;VcE=8V
40
200
fr
Current-Gain — Bandwidth Product
lo= 15mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
COB
Output Capacitance
IE=0; VCB=10V;f=1MHz
0.38 0.6
pF
PG
Power Gain
lc= 15mA ; VCE= 8V; f= 900MHz
15
dB
PG
Power Gain
lc= 15mA ; VCE= 8V; f= 1.8GHz
9.5
dB
1 S21e 1 2 Insertion Power Gain
I S21e I 2 Insertion Power Gain
lc= 15mA ; VOE= 8V; f= 900MHz
12.5
dB
lc= 15mA ; VCE= 8V; f= 1 .8GHz
7
dB
NF
Noise Figure
lc= 2mA ; VCE= 6V; f= 900MHz
1.8
dB
NF
Noise Figure
lc= 2mA ; VCE= 6V; f= 1 .8GHz
2.9
dB
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