Q67042-S4075 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

比赛名单

Q67042-S4075

OptiMOS® -P Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSS 223PW

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

Thermal resistance, junction - ambient, leaded

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

- 180 K/W

-

- 500

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -20

-

-V

Gate threshold voltage, VGS = VDS

VGS(th) -0.6 -0.9 -1.2

ID =-1.5µA

Zero gate voltage drain current

VDS=-20V, VGS=0, Tj=25°C

VDS=-20V, VGS=0, Tj=150°C

IDSS

µA

- -0.1 -1

-

-10 -100

Gate-source leakage current

VGS=-12V, VDS=0

Drain-source on-state resistance

VGS=-2.5V, ID=-0.29A

Drain-source on-state resistance

VGS=-4.5, ID=-0.39A

IGSS

RDS(on)

RDS(on)

-

-10 -100 nA

- 1.27 2.1 Ω

-

0.7 1.2

Page 2

2002-07-04

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