CR8AM 查看數據表（PDF） - Renesas Electronics
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CR8AM Datasheet PDF : 8 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
5
3
2
102
DISTRIBUTION
7
5
3
2
101
7
5
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,T,,,,,,YP,,,,,,ICA,,,,,,L E,,,,,,XA,,,,,,MPLE
100
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
TURN-ON TIME VS. GATE CURRENT
5.0
VD = 100V
4.5
RL = 12Ω
4.0
Ta = 25°C
TYPICAL
3.5
EXAMPLE
3.0
IGT (25°C)
# 5.2mA
2.5
2.0
#
1.5
1.0
0.5
0
0 10 20 30 40 50 60 70 80 90 100
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
50
45
40
35
30
25
20
15
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
10
5
0
0 2 4 6 8 10 12 14 16 18 20
GATE TRIGGER CURRENT (mA)
TURN-OFF TIME VS.
80
70
60
50
40
30
20
,,,,,,,,,,J,,,,,,,,,,TEUYXN,,,,,,,,,,PACIMCT,,,,,,,,,,PAIOLL,,,,,,,,,,EN T,,,,,,,,,,EM,,,,,,,,,,PDEI,,,,,,,,,,SRTA,,,,,,,,,,RTIUB,,,,,,,,,,RUETION
IT = 8A, – di/dt = 5A /µs,
10
VD = 300V, dv/dt = 20V/µs
0
VR = 50V
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
tw
5
3
2
0.1s
103
7
5
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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