ISL84582 查看數據表（PDF） - Renesas Electronics
零件编号
产品描述 (功能)
比赛名单
ISL84582 Datasheet PDF : 14 Pages
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ISL84582
Typical Performance Curves
-10
V+ = 3V to 12V or
-20 VS = 2V to 5V
RL = 50
-30
-40
TA = +25°C, Unless Otherwise Specified. (Continued)
10
3
20
2
30
V+ = 3.3V
40
1
V- = 0V
-50
50
0
V+ = 12V
V- = 0V
-60
60
V+ = 5V
ISOLATION
-70
-1
70
V- = 0V
CROSSTALK
VS =±5V
-80
80
-2
-90
90
-100
-110
1k
100
ALL HOSTILE CROSSTALK
110
10k
100k
1M
10M
100M 500M
FREQUENCY (Hz)
FIGURE 19. CROSSTALK AND OFF-ISOLATION
-3
-4
-5
-2.5
0
2.5
5
7.5
10 12
VCOM (V)
FIGURE 20. CHARGE INJECTION vs SWITCH VOLTAGE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
ISL84582: 193
PROCESS:
Si Gate CMOS
FN6213 Rev 3.00
May 6, 2009
Page 13 of 14
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