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ISL97636 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
比赛名单
ISL97636
Renesas
Renesas Electronics Renesas
ISL97636 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ISL97636
Absolute Maximum Ratings (TA = +25°C)
VIN, FAULT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 24V
VDC, COMP, RSET, EN/PWM . . . . . . . . . . . . . . . . . . . -0.3V to 6.5V
OVP, IIN0 - IIN7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 28V
LX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 36V
PGND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Above voltage ratings are all with respect to GND pin
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Thermal Information
Thermal Resistance (Typical, Notes 1, 2) JA (°C/W) JC (°C/W)
24 Ld QFN . . . . . . . . . . . . . . . . . . . . . .
39
2
Thermal Characterization (Typical, Note 3)
PSIJT (°C/W)
24 Ld QFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~0.7
Maximum Continuous Junction Temperature . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside assumed under ideal case temperature.
3. PSIJT is the junction-to-top thermal resistance. If the package top temperature can be measured, with this rating then the die junction temperature
can be estimated more accurately than the JC and JC thermal resistance ratings.
4. Limits established by characterization and are not production tested.
Electrical Specifications
All specifications below are tested at TA = -40°C to +85°C; VIN = 12V, EN = 5V, RSET = 36.6k; Parameters
with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits
established by characterization and are not production tested.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
GENERAL
VIN
Backlight Supply Voltage
9 LEDs per channel
6
(3.5V/30mA type)
24
V
IVIN_STBY
VIN Shutdown Current
5
µA
VOUT
Vuvlo
Output Voltage
Undervoltage Lockout Threshold
34.5
V
2.45
2.8
V
Vuvlo_hys
Undervoltage Lockout Hysteresis
300
mV
SS
Soft-start
1
ms
PWM GENERATOR
EN/PWM
EN/PWM Voltage Range
2.7
5.5
V
ENmin
Minimum Enable Signal
40
µs
tMAX_PWM_OFF Maximum PWMI Off Time Before
Shutdown
EN/PWMI toggles
28
ms
REGULATOR
VDC
IVDC_STBY
LDO Output Voltage
Standby Current
VIN > 6V
5.0
EN/PWM = 0V
5.5
V
20
µA
IVDC
Active Current
EN/PWM = 5V
10
mA
VLDO
BOOST
VDC LDO Dropout Voltage
VIN > 5.5V, 30mA
30
200
mV
SWILimit
rDS(ON)
Boost FET Current Limit
Internal Boost Switch ON-Resistance
TA = +25°C
TA = -40°C, +85°C
2.3
3.2
A
2.2
A
130
260
m
FN6570 Rev 0.00
May 9, 2008
Page 4 of 18

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