STW13NK60Z(2005) 查看數據表（PDF） - STMicroelectronics

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STW13NK60Z
(Rev.:2005)

N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z

Table 7. Gate-source zener diode

Symbol

Parameter

Test Conditions

Min.

BVGSO

Note 6

Gate-Source Breakdown

Voltage

Igs=±1mA

(Open Drain)

30

Table 8. Source drain diode

Symbol

Parameter

Test Conditions

ISD

Source-drain Current

ISDMNote 2 Source-drain Current (pulsed)

VSDNote 4 Forward on Voltage

ISD = 10 A, VGS=0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD= 10A, di/dt = 100A/µs,

VDD=35 V, Tj=150°C

Min.

Typ.

Max. Unit

V

Typ. Max. Unit

10

A

40

A

1.6

V

570

ns

4.5

µC

16

A

(1) Limited only by maximum temperature allowed

(2) Pulse width limited by safe operating area

(3) ISD ≤13A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80%

(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,

but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In

this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

(7) When mounted on minimum Footprint

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