1N4148M 查看數據表（PDF） - New Jersey Semiconductor
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1N4148M Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N4148M
SILICON EPITAXIAL PLANAR DIODE
Silicon Expitaxial Planar Diode
fast switching diode.
max, 1.90
Cathode
Mark in White
max. 0.420
Glass case JEDEC DO-34
Absolute Maximum Ratings (Ta = 25 °C)
Dimensions in mm
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f > 50 Hz
Symbol
VR
VRM
'„
Value
50
60
130"
Surge Forward Current at t < 1 s and Jj = 25 °C
FSM
500
Power Dissipation at TamB = 25 °C
400"
P«
Junction Temperature
200
T,
Storage Temperature Range
Ts
-65 to + 200
" Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Characteristics at T = 25 °C
Forward Voltage
at IP= 100mA
Symbol
Min.
Typ.
VF
*
~
Leakage Current
at VR = 50V
I,
~
•
Reverse Breakdown Voltage
tested with 1 00 nA Pulses
V(BR)R
60
"
Capacitance
atVF = VR = 0
c«
"
"
Reverse Recovery Time
t,,
"
*
from IF= 10 mA to IR= 1 mA, VR = 6 V, RL = 100 iJ,
1» Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Max.
1.1
0.5
~
3
4
Unit
V
V
mA
mA
mW
°C
°C
Unit
V
uA
V
PF
ns
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