2SD871 查看數據表（PDF） - Inchange Semiconductor

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2SD871

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200m A;IC=0

VCEsat Collector-emitter saturation voltage IC=5 A;IB=B 1 A

VBEsat Base-emitter saturation voltage

IC=5 A;IB=B 1 A

ICBO

Collector cut-off current

VCB=500V;IE=0

hFE

DC current gain

IC=1A ; VCE=5V

VF

Diode forward voltage

IF=6A

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

tf

Fall time

IC=5A;IB1end=1A

Product Specification

2SD871

MIN TYP. MAX UNIT

5

V

5.0

V

1.5

V

10 μA

8

2.0

V

3

MHz

165

pF

1.0 μs

2

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