2SC1975 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
比赛名单
2SC1975 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistor
2SC1975
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCBO Collector-Base Breakdown Voltage
lc=1mA;lB=0
120
V
VCER
Collector- Emitter Breakdown Voltage lc=2mA; RBE=100O
90
V
VEBO
Emitter-Base Breakdown Voltage
le=10uA; lc=0
5
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; |B= 0.2A
I CEO
Collector Cutoff Current
VCB= 40V ; IE= 0
1
V
»
1.0 n A
hFE
DC Current Gain
lc=1A;VCE=5V
50
200
COB
Output Capacitance
|E=0;VCB=10V;ftest=1MHz
60
pF
fi
Current-Gain—Bandwidth Product
lc=0.5A;VCE=5V
80
MHz
Po
Output power
Vcc=13.5V;f=27MHz;Pin=0.2W
1
W
Share Link: 