2SC2690A 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SC2690A

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

2SC2690/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC=0

hFE-1

DC Current Gain

IC= 5mA ; VCE= 5V

hFE-2

DC Current Gain

IC= 0.3A ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V;ftest= 1.0MHz

MIN TYP. MAX UNIT

0.7

V

1.3

V

1.0 μA

1.0 μA

35

60

320

155

MHz

19

pF

 hFE-2 Classifications

R

Q

P

60-120 100-200 160-320

SPTECH website：www.superic-tech.com

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