RL251 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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RL251 Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
RL251 – RL257
2.5A SILICON RECTIFIER
A
B
A
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
DO-15
Dim
Min
Max
A
24.5
—
B
5.50
7.62
C
0.60
0.80
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol RL251 RL252 RL253 RL254 RL255 RL256 RL257 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100 200 400 600 800 1000
V
VR
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@TA = 75°C
IO
2.5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
70
A
rated load (JEDEC Method)
Forward Voltage
@IF = 2.5A
VFM
1.0
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
20
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
40
K/W
Operating Temperature Range
Tj
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
RL251 – RL257
1 of 2
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