A1203 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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A1203

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SA1203

TRANSISTOR (PNP)

FEATURES

z Complementary to 2SC2883

z Small Flat Package

z Audio Frequency Amplifier Application

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-30

-30

-5

-1.5

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= -1mA,IE=0

-30

V

V(BR)CEO IC=-10mA,IB=0

-30

V

V(BR)EBO IE=-1mA,IC=0

-5

V

ICBO

VCB=-30V,IE=0

-100

nA

IEBO

VEB=-5V,IC=0

-100

nA

hFE

VCE=-2V, IC=-500mA

100

320

VCE(sat) IC=-1.5A,IB=-30mA

-2

V

VBE

VCE=-2V, IC=-500mA

-1

V

Cob

VCB=-10V,IE=0, f=1MHz

50

pF

fT

VCE=-2V,IC= -500mA

120

MHz

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

O

100–200

HO1

Y

160–320

HY1

www.cj-elec.com

1

D,Jul,2016

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