NTE2339 查看數據表（PDF） - NTE Electronics

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NTE2339

Silicon NPN Transistor High Voltage, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

1100 – – V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞

800 – – V

Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0

7––V

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, 800 –

–

V

L = 2mH, Clamped

Turn–On Time

Storage Time

Fall Time

ton

tstg

VCC = 400V, IB1 = –2.5A,

IB2 =IC = 2A, RL = 200Ω

tf

– – 0.5 µs

– – 3.0 µs

– – 0.3 µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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