NTE2310 查看數據表（PDF） - NTE Electronics

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NTE2310

Silicon NPN Transistor High Voltage, High Speed Switch

NTE Electronics 

NTE2310

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for

use in high voltage, fast switching industrial applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Base Current, IB

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W

Electrical Charactertistics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, L = 25mH, Note 1

400 –

Collector Cutoff Current

ICES VCE = 1000V, VBE = 0

–

–

VCE = 1000V, VBE = 0, TC = +125°C –

–

–

V

1 mA

3 mA

Emitter Cutoff Current

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Turn–On Time

Storage Time

Fall Time

IEBO

VCE(sat)

VBE(sat)

ton

ts

tf

VEB = 9V, IC = 0

IC = 6A, IB = 1.2A, Note 1

IC = 6A, IB = 1.2A, Note 1

IC = 6A, IB1 = 1.2A, IB2 = 1.2A

–

– 10 mA

–

– 1.5 V

–

– 1.5 V

–

–

1 µs

–

–

4 µs

–

– 0.8 µs

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

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