HMC930A 查看數據表（PDF） - Analog Devices

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HMC930A

GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz

Analog Devices 

Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter

Drain Bias Voltage (VDD)

Gate Bias Voltage

VGG1

VGG2

VDD = 12 V

VDD = 8.5 V to 11 V

VDD < 8.5 V

RF Input Power (RFIN)

Channel Temperature

Continuous Power Dissipation, PDISS

(TA = 85°C, Derate 69 mW/°C

Above 85°C)

Thermal Resistance

(Channel to Die Bottom)

Output Power into Voltage Standing

Wave Ratio (VSWR) > 7:1

Storage Temperature Range

Operating Temperature Range

ESD Sensitivity, Human Body Model

(HBM)

Rating

13 V

−3 V to 0 V dc

VGG2 = 5.5 V, IDD >145 mA

VGG2 = (VDD − 6.5 V) up to

4.5 V

VGG2 must remain > 2 V

22 dBm

150°C

2.1 W

31.1°C/W

24 dBm

−65°C to +150°C

−55°C to +85°C

Class 1A, passed 250 V

HMC930A

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

ESD CAUTION

Rev. 0 | Page 5 of 16

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