2N6594 查看數據表（PDF） - New Jersey Semiconductor
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2N6594 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-100mA;lB=0
VcE(sat)-l Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-12A; IB=-2.4A
VsE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
lc= -4A; IB= -0.4A
VCEO= -40V; IB= 0
ICBO
Collector Cutoff Current
VCBO= -45V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5.0V; lc= 0
hpE-1
DC Current Gain
lc= -4A; VGE= -3V
hFE-2
DC Current Gain
lc=-12A;VCE=-4V
fl
Current Gain-Bandwidth Product
Switching times
td
Delay Time
tr
Rise Time
ts
Storage Time
t.
Fall Time
lc= -1A; VCE= -4V; f,es,= 0.5MHz
Vcc= -30V; lc= -2A; IB1= -IB2= -0.2A,
tp= 25 u s; Duty Cycle=S2.0%
2N6594
MIN MAX UNIT
-40
V
-1.5
V
-4.0
V
-2.0
V
-1.0 mA
-1.0 mA
-5.0 mA
15 200
5
100
1.5
20 MHz
0.4
us
1.5
us
5.0
us
1.5
ps
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