MTP1N100E 查看數據表（PDF） - ON Semiconductor
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MTP1N100E Datasheet PDF : 7 Pages
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MTP1N100E
SAFE OPERATING AREA
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
10 μs
100 μs
0.1
0.01
0.1
1 ms
10 ms
RDS(on) LIMIT
dc
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
ID = 1 A
40
30
20
10
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E−05
0.05
0.02
0.01
SINGLE PULSE
1.0E−04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E+00
1.0E+0
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
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