LT3795 查看數據表（PDF） - Linear Technology
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LT3795 Datasheet PDF : 30 Pages
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LT3795
Typical Performance Characteristics
TA = 25°C, unless otherwise noted.
V(IVINP-IVINN) Threshold
vs Temperature
65
VIN = 24V
64
63
62
61
60
59
58
57
56
55
–50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
3795 G23
RAMP Pin Sourcing and Sinking
Current vs Temperature
13
12
SINKING
SOURCING
11
10
9
8
–50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
3795 G26
V(IVINP-IVINN) Threshold vs VIN
65
64
63
62
61
60
59
58
57
56
55
0 20 40 60 80 100 120
VIN (V)
3795 G24
NMOS Gate Rise/Fall Time
vs Capacitance
160
140
120
100
RISE TIME
80
60
FALL TIME
40
20
0
0
10
20
30
40
50
CAPACITANCE (nF)
3795 G27
VIVINCOMP vs V(IVINP-IVINN)
1.8
VIN = 24V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
V(IVINP-IVINN) (mV)
80
3795 G25
Top Gate (PMOS) Rise/Fall Time
vs Capacitance
800
700
600
500
FALL TIME
400
300
200
100
RISE TIME
0
0 1 2 3 4 5 6 7 8 9 10
CAPACITANCE (nF)
3795 G28
Top Gate Driver Rising Edge
PWM 5V
0V
Top Gate Driver Falling Edge
PWM
5V
0V
85V
TG 75V
TG 85V
75V
100ns/DIV
PMOS VISHAY SILICONIX Si7113DN
3795 G29
100ns/DIV
PMOS VISHAY SILICONIX Si7113DN
3795 G30
3795fb
8
For more information www.linear.com/LT3795
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