HMC594LC3B(V02) 查看數據表（PDF） - Hittite Microwave

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HMC594LC3B
(Rev.:V02)

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

Hittite Microwave 

v02.0210

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)(Vdd = +6V)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 10 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

7V

+15 dBm

175 °C

0.9 W

100 °C/W

-65 to +150 °C

-40 to +85 °C

HMC594LC3B

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 2 - 4 GHz

7

Typical Supply Current vs. Vdd

Vdd (V)

+5.5

+6.0

+6.5

Idd (mA)

97

100

103

Note: Amplifier will operate over full voltage range shown above

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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