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2SC2981

Silicon NPN Power Transistor

New Jersey Semiconductor 

<^£.mi-Conau.(itoi ^Product*., One,,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC2981

DESCRIPTION

• Collector-Emitter Sustaining Voltage-

: VCE0(Sus)= SOOV(Min)

• Collector-Emitter Saturation Voltage-

:VCE(sa.)=1.0V(Max)@lc-2A

• Fast Switching Speed

APPLICATIONS

• Designed for high-voltage, high-speed and high power

switching applications.

PIN 1.BASE

2.BUIITTER

3. COLLECT OR (CASE)

TO-3 package

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

Ic

Collector Current-Continuous

ICM

Collector Current-Peak

IB

Base Current-Continuous

Total Power Dissipation

PC

@ Tc=25t

Tj

Junction Temperature

Tstg

Storage Temperature Range

900

V

800

V

7

V

8

A

16

A

4

A

100

W

150

t:

-55-150 "C

-JL-DZPL

t-1

V-.

-i T

iran

D»M MM MAX

A

39 00

e 25.30 28.67

c

7.80

8:60

D

0.90 1 10

E

1.40 1,60

Q

1092

H

546

£ :..;o 1350

L 1675 1705

H 1940 19 $2

g

400 420

u 3000 3020

V

430 450

N.I Sonii-Cdinluctors rcscrvo.s the right to change test cnmlitions. parameter limits and pucksige dimensions \\ithout

mniee. Information tumishal by N,l Semi-Conductors is helie\ed to he both accurate and reliable at the lime ol'eoini;

10 press. I lo\\e\er. N.I Scini-Coiuluctors assumes no rcsponsihiliix lor an) errors or OMU'SMOMS discovered in its use.

N.I Senii-Conduciors encourages cuslomers In \erily that Jalasheels are eiinvnl be It ire placing orders.

Quality Semi-Conducfors

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