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MMDF2C01HD 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
比赛名单
MMDF2C01HD
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMDF2C01HD Datasheet PDF : 16 Pages
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MMDF2C01HD
Preferred Device
Power MOSFET
2 Amps, 12 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
N−Channel
P−Channel
VDSS
Vdc
20
12
Gate−to−Source Voltage
Drain Current − Continuous
− Pulsed
N−Channel
P−Channel
N−Channel
P−Channel
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C
(Note 2.)
VGS
ID
IDM
TJ and
Tstg
PD
± 8.0
5.2
3.4
48
17
−55 to
150
2.0
Vdc
A
°C
Watts
Thermal Resistance − Junction to Ambient
(Note 2.)
RθJA
62.5 °C/W
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8from case for 10 seconds.
260
°C
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES
12 VOLTS
RDS(on) = 45 mW (N−Channel)
RDS(on) = 180 mW (P−Channel)
N−Channel
D
P−Channel
D
G
G
S
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 14
D2C01
LYWW
1
D2C01 = Device Code
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
18
27
36
45
Top View
N−Drain
N−Drain
P−Drain
P−Drain
ORDERING INFORMATION
Device
Package
Shipping
MMDF2C01HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMDF2C01HD/D

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