MMDF2C01HDR2 查看數據表（PDF） - ON Semiconductor
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MMDF2C01HDR2 Datasheet PDF : 16 Pages
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MMDF2C01HD
ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6.)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS − continued (Note 8.)
Total Gate Charge
QT
Gate−Source Charge
Gate−Drain Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
Q1
VGS = 4.5 Vdc)
(VDS = 6.0 Vdc, ID = 2.0 Adc,
Q2
VGS = 4.5 Vdc)
Q3
(N)
−
9.2
13
nC
(P)
−
9.3
13
(N)
−
1.3
−
(P)
−
0.8
−
(N)
−
3.5
−
(P)
−
4.0
−
(N)
−
3.0
−
(P)
−
3.0
−
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 7.)
(IS = 4.0 Adc, VGS = 0 Vdc)
VSD
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
trr
(N)
−
0.95
1.1
Vdc
(P)
−
1.69
2.0
(N)
−
38
−
ns
(P)
−
48
−
(IF = IS,
dIS/dt = 100 A/µs)
ta
(N)
−
17
−
(P)
−
23
−
tb
(N)
−
22
−
(P)
−
25
−
Reverse Recovery Stored
Charge
QRR
(N)
−
0.028
−
µC
(P)
−
0.05
−
6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
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