MMDF2C01HD 查看數據表（PDF） - Motorola => Freescale

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MMDF2C01HD

Complementary TMOS Field Effect Transistors

Motorola => Freescale 

MMDF2C01HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic

Symbol Polarity Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 20 Vdc)

(VGS = 0 Vdc, VDS = 12 Vdc)

Gate–Body Leakage Current

(VGS = ± 8.0 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

V(BR)DSS

(N)

20

(P)

12

IDSS

(N)

—

(P)

—

IGSS

—

—

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

Drain–to–Source On–Resistance

(VGS = 2.7 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.0 Adc)

Forward Transconductance

(VDS = 2.5 Adc, ID = 2.0 Adc)

(VDS = 2.5 Adc, ID = 1.0 Adc)

VGS(th)

(N)

0.7

(P)

0.7

RDS(on)

(N)

—

(P)

—

RDS(on)

(N)

—

(P)

—

gFS

(N)

3.0

(P)

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(N)

—

(P)

—

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

—

(P)

—

Transfer Capacitance

Crss

(N)

—

(P)

—

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

Rise Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

td(on)

tr

(N)

—

(P)

—

(N)

—

(P)

—

Turn–Off Delay Time

Fall Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(off)

tf

(N)

—

(P)

—

(N)

—

(P)

—

Turn–On Delay Time

Rise Time

(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

td(on)

tr

(N)

—

(P)

—

(N)

—

(P)

—

Turn–Off Delay Time

Fall Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

tf

(N)

—

(P)

—

(N)

—

(P)

—

Total Gate Charge

Gate–Source Charge

QT

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

Q1

(N)

—

(P)

—

(N)

—

(P)

—

Gate–Drain Charge

(VDS = 6.0 Vdc, ID = 2.0 Adc,

Q2

VGS = 4.5 Vdc)

Q3

(N)

—

(P)

—

(N)

—

(P)

—

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

—

—

Vdc

—

—

µAdc

—

1.0

—

1.0

nAdc

—

100

0.8

1.0

0.035

0.16

0.043

0.2

6.0

4.75

1.1

1.1

0.045

0.18

0.055

0.22

—

—

Vdc

Ohm

Ohm

mhos

425

595

pF

530

740

270

378

410

570

115

230

177

250

13

26

ns

21

45

60

120

156

315

20

40

38

75

29

58

68

135

10

20

16

35

42

84

44

90

24

48

68

135

28

56

54

110

9.2

13

nC

9.3

13

1.3

—

0.8

—

3.5

—

4.0

—

3.0

—

3.0

—

(continued)

2

Motorola TMOS Power MOSFET Transistor Device Data

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